msd30 msd30 ? rev 0 www.microsemi.com dec, 2009 1/3 module type type v rrm v rsm msd30-08 msd30-12 msd30-16 MSD30-18 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v maximum ratings symbol conditions values units id tc=85 30 a ifsm t=10ms tv j =45 300 a i 2 t t=10ms tv j =45 450 a 2 s visol a.c.50hz;r.m.s.;1min 3000 v tvj -40 to 150 tstg -40 to 125 ms to heatsink(m5) 35% nm weight module 78 g thermal characteristics symbol conditions values units rth(j-c) per diode 1.5 / w rth(c-s) module 0.2 / w electrical characteristics circuit glass passivated three phase rectifier bridge v rrm 800 to 1800v i d 30 amp features y three phase bridge rectifier y blocking voltage:800 to 1800v y heat transfer through aluminum oxide dcb ceramic isolated metal baseplate y glass passivated chip applications y three phase rectifiers for power supplies y rectifiers for dc motor field supplies y battery charger rectifiers y in p ut rectifiers for variable fre q uenc y drives 4 3 7 2 1 msd symbol conditions values units vfm t=25 ifm =100a 1.6 v ird tvj =25 vrd=vrrm tvj =150 vrd=vrrm 0.2 3 ma ma
msd30 msd30 ? rev 0 www.microsemi.com dec, 2009 2/3 performance curves fig1. forward characteristics fig3. transient thermal impedance fi g 2. power dissi p ation fig4. max non-repetitive forward surge current fig5.forward current derating curve typ. 25 125 z th(j- c ) 200 a 150 100 50 if 0 0 vf 0.5 1.0 1.5 2.0 v 1 10 cycles 100 600 a 400 200 0 0 tc 50 100 150 i d 50 a 40 30 0 20 10 0.001 0.01 0.1 1 10 100 s 1.5 1.0 0.5 0 2.0 / w 0 i d 15 30 a 50hz w 0 70 35 p vtot
msd30 msd30 ? rev 0 www.microsemi.com dec, 2009 3/3 package outline information case-m1 dimensions in mm
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